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| PN2907 / MMBT2907 Discrete POWER & Signal Technologies PN2907 MMBT2907 C E C BE TO-92 SOT-23 Mark: 2B B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 60 5.0 800 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2907 625 5.0 83.3 200 Max *MMBT2907 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation PN2907 / MMBT2907 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX IB ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current Collector Cutoff Current I C = 10 mA, I B = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 VCE = 30 V VBE = 0.5 V VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150 C 40 60 5.0 50 50 20 20 V V V nA nA nA A ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 30 300 0.4 1.6 1.3 2.6 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Cob Cib hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz VEB = 2.0 V, f = 1.0 MHz I C = 50 mA, VCE = 20 V, f = 100 MHz 2.0 8.0 30 pF pF SWITCHING CHARACTERISTICS ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 6.0 V, IC = 150 mA I B1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA, I B1 = 15 mA , PW = 200 ns 45 10 40 100 80 30 ns ns ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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